MOSFETS

PACKAGE: TO-72

Part

Package

Breakdown V Min

IGSS(pA) Max

IDSS(nA) Max

VGS(V) Min

VGS(V) Max

RDS (on)(Ohm) Max

Comments

Channel

2N4351

TO-72

25 10 10 300

High Gain, Low Capacitance

N-Channel Enhancement Mode

2N4352

TO-72

-25

± 10

-10 600

High Gain, Low Capacitance

P-Channel Enhancement Mode

3N161

TO-72

-25 -10 -4.5 -8

Diode Protected

P-Channel Enhancement Mode

3N163

TO-72

-40 -10 0.2 -2.5 -6.5 250

Very High Input Impedance

P-Channel Enhancement Mode

3N164

TO-72

-30 -10 0.4 -2.5 -6.5 300

Very High Input Impedance

P-Channel Enhancement Mode

3N170

TO-72

25

± 10

10 200

Low Switching Voltages

N-Channel Enhancement Mode

3N171

TO-72

25

± 10

10 200

Low Switching Voltages

N-Channel Enhancement Mode

3N172

TO-72

-40 -200 -0.4 -3 -6.5 250

High Imput Impedance, Diode Protected

P-Channel Enhancement Mode

3N173

TO-72

-30 -500 -10 -2.5 -6.5 350

High Imput Impedance, Diode Protected

P-Channel Enhancement Mode

 

PACKAGE: TO-99

Part

Package

Breakdown V Min

IDSS (nA) Max

VGS (V) Min

VGS (V) Max

RDS (on)(Ohm) Max

Comments

Channel

3N165

TO-99

40 -0.2 300

Very High Impedance

P-Channel Enhancement Mode

3N166

TO-99

30 -0.2 300

Very High Impedance

P-Channel Enhancement Mode

3N190

TO-99

-40 -0.2 -3 -6.5 300

Very High Input Impedance

Dual P-Channel Enhancement Mode

3N191

TO-99

-40 -0.2 -3 -6.5 300

Very High Input Impedance

Dual P-Channel Enhancement Mode